| Mfr. No: | AMR020V120H2 |
| Mfr.: | APC-E |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 1200V 20mR, TO-247-4L, Industrial Grade |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 88A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 26mOhm @ 40A, 18V |
| Vgs(th) (Max) @ Id | 4.2V @ 18mA |
| Gate Charge (Qg) (Max) @ Vgs | 154 nC @ 18 V |
| Vgs (Max) | +22V, -8V |
| Input Capacitance (Ciss) (Max) @ Vds | 3533 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 403W (Ta) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4L |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 382 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290000 |
| ECCN | EAR99 |
APC-E manufactures the AMR020V120H2, a sic mosfets part used in electronic assemblies. Key specifications include FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 88A (Ta), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 26mOhm @ 40A, 18V. This part has a typical lead time of 382 Days from factory. You can source AMR020V120H2 through Simplytronix, with fast shipping and verified authenticity.