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AMR1k0V170E1 APC-E
*For representation only.

AMR1k0V170E1

Mfr. No: AMR1k0V170E1
Mfr.: APC-E
Category: SiC MOSFETs
Description: SiC MOSFETs 1700V 1000mR, TO247-3L, Industrial Grade
Lifecycle: Active
Datasheet: AMR1k0V170E1 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1700 V
Current - Continuous Drain (Id) @ 25°C 6.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 1.2Ohm @ 2A, 20V
Vgs(th) (Max) @ Id 4V @ 500µA
Gate Charge (Qg) (Max) @ Vgs 16.7 nC @ 20 V
Vgs (Max) +27V, -10V
Input Capacitance (Ciss) (Max) @ Vds 227 pF @ 1000 V
FET Feature -
Power Dissipation (Max) 100W (Tc)
Operating Temperature -55°C ~ 175°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-247-3L
Package / Case TO-247-3
📦 Product Attributes
Packaging Tube
Standard Pack Qty 30
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
5,879
Units In Stock
📦 Tube
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🔑 Key Specifications
Category SiC MOSFETs
RoHS RoHS Compliant By Exemption
Lifecycle New Product
Lead Time 370 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CAHTS 8541290000
USHTS 8541290065
JPHTS 854129000
TARIC 8541290000
MXHTS 8541299900
ECCN EAR99
ℹ Product Overview

The AMR1K0V170E1 from APC-E falls under the sic mosfets category. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 6.8A (Tc), drive voltage: 20V and rds on (max) @ id, vgs: 1.2Ohm @ 2A, 20V. This part has a typical lead time of 370 Days from factory and ships with a full manufacturer datasheet available for download. AMR1K0V170E1 is available through Simplytronix, sourced and verified for authenticity.

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