| Mfr. No: | BSDW20S65C6 |
| Mfr.: | Bourns |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 650V each 10A Low Vf Dual SiC schottky diode in TO247-3 |
| Datasheet: | BSDW20S65C6 Datasheet (PDF) |
| Diode Configuration | 1 Pair Common Cathode |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) (per Diode) | 20A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Operating Temperature - Junction | -55°C ~ 175°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Supplier Device Package | TO-247 |
| Packaging | Tube |
| Standard Pack Qty | 480 |
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541100090 |
| USHTS | 8541100080 |
| TARIC | 8541100000 |
| ECCN | EAR99 |
Manufactured by Bourns, the BSDW20S65C6 is classified under sic schottky diodes. Technical specifications for this part include diode configuration: 1 Pair Common Cathode, technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified (io): 20A, voltage, forward (vf) (max) @ if: 1.45 V @ 10 A and speed: Fast Recovery =< 500ns, > 200mA (Io). This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Get BSDW20S65C6 from Simplytronix, shipped same day with a genuine parts guarantee.