*For representation only.
BSDD08G65E2
| Mfr. No: | BSDD08G65E2 |
| Mfr.: | Bourns |
| Category: | SiC Schottky Diodes |
| Description: | SiC Schottky Diodes 650V 8A High Surge SiC diode in TO252 |
| Lifecycle: | Active |
| Datasheet: | BSDD08G65E2 Datasheet (PDF) |
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Specifications
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 8A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 8 A |
| Speed | Zero Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 40 µA @ 650 V |
| Capacitance @ Vr, F | 267pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (DPAK) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 5000 |
7,792
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC Schottky Diodes |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 126 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541100080 |
| ECCN | EAR99 |
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Product Overview
BSDD08G65E2 is a sic schottky diodes part produced by Bourns for use across a range of applications. It features technology: SiC (Silicon Carbide) Schottky, voltage, DC reverse (vr): 650 V, current, average rectified: 8A, voltage, forward (vf) (max) @ if: 1.7 V @ 8 A, speed: Zero Recovery Time > 500mA (Io) and reverse recovery time: 0 ns. This part has a typical lead time of 126 Days from factory and ships with a full manufacturer datasheet available for download. Order BSDD08G65E2 from Simplytronix for authenticated stock and same-day order processing.
