| Mfr. No: | 2N2369A TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 40Vcbo 40Vces 15V 4.5Vebo 200mA 500mA |
| Datasheet: | 2N2369A TIN/LEAD Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 1V |
| Power - Max | 360 mW |
| Frequency - Transition | 500MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Packaging | Bulk |
| Standard Pack Qty | 2000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
The 2N2369A TIN/LEAD from Central Semiconductor falls under the bipolar transistors - bjt category. Key specifications include transistor type: NPN, current, collector (ic): 200 mA, voltage, collector emitter breakdown: 15 V, vce saturation (max) @ ib, ic: 500mV @ 10mA, 100mA, current, collector cutoff: 400nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 40 @ 10mA, 1V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. 2N2369A TIN/LEAD is available through Simplytronix, sourced and verified for authenticity.