| Mfr. No: | 2N2857 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 30Vcbo 15Vceo 2.5V 40mA 200mW |
| Lifecycle: | Active |
| Datasheet: | 2N2857 TIN/LEAD Datasheet (PDF) |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 1.9GHz |
| Noise Figure (dB Typ @ f) | 4.5dB @ 450MHz |
| Gain | 12.5dB ~ 19dB |
| Power - Max | 200mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 3mA, 1V |
| Current - Collector (Ic) (Max) | 40mA |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-206AF, TO-72-4 Metal Can |
| Supplier Device Package | TO-72 |
| Packaging | Bulk |
| Standard Pack Qty | 2000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| ECCN | EAR99 |
The 2N2857 TIN/LEAD, made by Central Semiconductor, belongs to the bipolar transistors - bjt product category. Notable characteristics of this part include transistor type: NPN, voltage, collector emitter breakdown: 15V, frequency, transition: 1.9GHz, noise figure: 4.5dB @ 450MHz, gain: 12.5dB ~ 19dB and power, max: 200mW. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2N2857 TIN/LEAD for same-day shipping with genuine parts guaranteed.