| Mfr. No: | 2N2896 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 140Vcbo 90Vceo 7.0Vebo 15pF 120MHz |
| Lifecycle: | Active |
| Datasheet: | 2N2896 TIN/LEAD Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 90 V |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 10nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 150mA, 10V |
| Power - Max | 1.8 W |
| Frequency - Transition | 120MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Packaging | Bulk |
| Standard Pack Qty | 2000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Central Semiconductor manufactures the 2N2896 TIN/LEAD, a bipolar transistors - bjt part used in electronic assemblies. Key specifications include transistor type: NPN, current, collector (ic): 1 A, voltage, collector emitter breakdown: 90 V, vce saturation (max) @ ib, ic: 600mV @ 15mA, 150mA, current, collector cutoff: 10nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 60 @ 150mA, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N2896 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.