| Mfr. No: | 2N2907A TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 60Vcbo 60Vceo 5V 0.5A 400mW |
| Datasheet: | 2N2907A TIN/LEAD Datasheet (PDF) |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 50nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 150mA, 10V |
| Power - Max | 400 mW |
| Frequency - Transition | 200MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
| Packaging | Bulk |
| Standard Pack Qty | 2000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Central Semiconductor manufactures the 2N2907A TIN/LEAD, a bipolar transistors - bjt part used in electronic assemblies. This part is specified with transistor type: PNP, current, collector (ic): 600 mA, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 400mV @ 15mA, 150mA, current, collector cutoff: 50nA and DC current gain (hfe) (min) @ ic, vce: 100 @ 150mA, 10V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N2907A TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.