*For representation only.
2N3108 TIN/LEAD
| Mfr. No: | 2N3108 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 100Vcbo 60Vceo 7.0Vebo 20pF |
| Lifecycle: | Active |
| Datasheet: | 2N3108 TIN/LEAD Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 10nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Frequency - Transition | 60MHz |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 500 |
13,401
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Central Semiconductor manufactures the 2N3108 TIN/LEAD, a bipolar transistors - bjt part used in electronic assemblies. Notable characteristics of this part include transistor type: NPN, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: -, current, collector cutoff: 10nA, DC current gain (hfe) (min) @ ic, vce: 40 @ 150mA, 10V and frequency, transition: 60MHz. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N3108 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.
