| Mfr. No: | 2N5059 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 250Vcbo 250Vceo 6.0Vebo 150mA 1.0W |
| Lifecycle: | Active |
| Datasheet: | 2N5059 TIN/LEAD Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 150 mA |
| Voltage - Collector Emitter Breakdown (Max) | 250 V |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 30mA, 25V |
| Power - Max | 5 W |
| Frequency - Transition | 160MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Packaging | Bulk |
| Standard Pack Qty | 500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
The 2N5059 TIN/LEAD, made by Central Semiconductor, belongs to the bipolar transistors - bjt product category. This component is defined by transistor type: NPN, current, collector (ic): 150 mA, voltage, collector emitter breakdown: 250 V, vce saturation (max) @ ib, ic: 1V @ 3mA, 30mA, current, collector cutoff: 50nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 30 @ 30mA, 25V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2N5059 TIN/LEAD for same-day shipping with genuine parts guaranteed.