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2N5088 TRA TIN/LEAD Central Semiconductor
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2N5088 TRA TIN/LEAD

Mfr. No: 2N5088 TRA TIN/LEAD
Mfr.: Central Semiconductor
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT NPN 35Vcbo 30Vceo 4.5Vebo 50mA 625mA
Lifecycle: Active
Datasheet: 2N5088 TRA TIN/LEAD Datasheet (PDF)
⚙ Specifications
Transistor Type NPN
Current - Collector (Ic) (Max) 50 mA
Voltage - Collector Emitter Breakdown (Max) 30 V
Vce Saturation (Max) @ Ib, Ic 500mV @ 1mA, 10mA
Current - Collector Cutoff (Max) 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 350 @ 1mA, 5V
Power - Max 625 mW
Frequency - Transition 50MHz
Operating Temperature -65°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package TO-92
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
6,052
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 294 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
USHTS 8541210095
TARIC 8541210000
ECCN EAR99
ℹ Product Overview

Central Semiconductor manufactures the 2N5088 TRA TIN/LEAD, a bipolar transistors - bjt part used in electronic assemblies. Technical specifications for this part include transistor type: NPN, current, collector (ic): 50 mA, voltage, collector emitter breakdown: 30 V, vce saturation (max) @ ib, ic: 500mV @ 1mA, 10mA, current, collector cutoff: 50nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 350 @ 1mA, 5V. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N5088 TRA TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.

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