| Mfr. No: | 2N5210 TRA TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 50Vceo 50Vcbo 4.5Vebo 50mA 350mW |
| Datasheet: | 2N5210 TRA TIN/LEAD Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Vce Saturation (Max) @ Ib, Ic | 700mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 250 @ 10mA, 5V |
| Power - Max | 1 W |
| Frequency - Transition | 30MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Supplier Device Package | TO-92 |
| Packaging | Reel |
| Standard Pack Qty | 2000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Manufactured by Central Semiconductor, the 2N5210 TRA TIN/LEAD is classified under bipolar transistors - bjt. Technical specifications for this part include transistor type: NPN, current, collector (ic): 50 mA, voltage, collector emitter breakdown: 50 V, vce saturation (max) @ ib, ic: 700mV @ 1mA, 10mA, current, collector cutoff: 50nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 250 @ 10mA, 5V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get 2N5210 TRA TIN/LEAD from Simplytronix, shipped same day with a genuine parts guarantee.