| Mfr. No: | 2N5401 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT PNP 160Vcbo 150Vceo 5.0Vebo 600mA 625mW |
| Lifecycle: | Active |
| Datasheet: | 2N5401 TIN/LEAD Datasheet (PDF) |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 10mA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 329 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
2N5401 TIN/LEAD is a bipolar transistors - bjt part produced by Central Semiconductor for use across a range of applications. Technical specifications for this part include transistor type: PNP, current, collector (ic): 600 mA, voltage, collector emitter breakdown: 150 V, vce saturation (max) @ ib, ic: 500mV @ 5mA, 50mA, current, collector cutoff: 50nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 60 @ 10mA, 5V. This part has a typical lead time of 329 Days from factory and ships with a full manufacturer datasheet available for download. Order 2N5401 TIN/LEAD from Simplytronix for authenticated stock and same-day order processing.