| Mfr. No: | 2N5551 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 180Vcbo 160Vceo 6.0Vebo 600mA 625mW |
| Lifecycle: | Active |
| Datasheet: | 2N5551 TIN/LEAD Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Central Semiconductor's 2N5551 TIN/LEAD is a widely used bipolar transistors - bjt part in electronic designs. Key specifications include transistor type: NPN, current, collector (ic): 600 mA, voltage, collector emitter breakdown: 160 V, vce saturation (max) @ ib, ic: 200mV @ 5mA, 50mA, current, collector cutoff: 50nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 80 @ 10mA, 5V. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies 2N5551 TIN/LEAD with same-day shipping and guaranteed authenticity.