| Mfr. No: | 2N5769 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 40Vcbo 40Vces 15Vceo 4.5Vebo 350mW |
| Datasheet: | 2N5769 TIN/LEAD Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 200 mA |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Vce Saturation (Max) @ Ib, Ic | 500mV @ 10mA, 100mA |
| Current - Collector Cutoff (Max) | 400nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 10mA, 350mV |
| Power - Max | 350 mW |
| Frequency - Transition | 500MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Central Semiconductor manufactures the 2N5769 TIN/LEAD, a bipolar transistors - bjt part used in electronic assemblies. It features transistor type: NPN, current, collector (ic): 200 mA, voltage, collector emitter breakdown: 15 V, vce saturation (max) @ ib, ic: 500mV @ 10mA, 100mA, current, collector cutoff: 400nA and DC current gain (hfe) (min) @ ic, vce: 40 @ 10mA, 350mV. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N5769 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.