*For representation only.
2N5770 TIN/LEAD
| Mfr. No: | 2N5770 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 30Vcbo 15Vceo 3.0Vebo 50mA 625mW |
| Datasheet: | 2N5770 TIN/LEAD Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 900MHz |
| Noise Figure (dB Typ @ f) | 6dB @ 60MHz |
| Gain | 15dB |
| Power - Max | 625mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 8mA, 1V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
5,381
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 210 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| ECCN | EAR99 |
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Product Overview
The 2N5770 TIN/LEAD from Central Semiconductor falls under the bipolar transistors - bjt category. Notable characteristics of this part include transistor type: NPN, voltage, collector emitter breakdown: 15V, frequency, transition: 900MHz, noise figure: 6dB @ 60MHz, gain: 15dB and power, max: 625mW. This part has a typical lead time of 210 Days from factory and ships with a full manufacturer datasheet available for download. 2N5770 TIN/LEAD is available through Simplytronix, sourced and verified for authenticity.
