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| Mfr. No: | 2N5815 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Through-Hole Transis tor-Small Signal (< |
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 750 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Vce Saturation (Max) @ Ib, Ic | 750mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 2mA, 2V |
| Power - Max | 625 mW |
| Frequency - Transition | 100MHz |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290055 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
As a bipolar transistors - bjt component, the 2N5815 TIN/LEAD is manufactured and supplied by Central Semiconductor. This component is defined by transistor type: PNP, current, collector (ic): 750 mA, voltage, collector emitter breakdown: 40 V, vce saturation (max) @ ib, ic: 750mV @ 50mA, 500mA, current, collector cutoff: 100nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 60 @ 2mA, 2V. This part has a typical lead time of 0 Days from factory. Simplytronix carries 2N5815 TIN/LEAD in stock, backed by a genuine parts guarantee and quick dispatch.
