*For representation only.
2N6027 TIN/LEAD
| Mfr. No: | 2N6027 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Prog Uni-Junction 40Vgkf 5.0Vgkr 40Vg |
| Lifecycle: | Active |
| Datasheet: | 2N6027 TIN/LEAD Datasheet (PDF) |
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Specifications
| Voltage | 40V |
| Power Dissipation (Max) | 300 mW |
| Voltage - Output | 6V |
| Voltage - Offset (Vt) | 1.6 V |
| Current - Gate to Anode Leakage (Igao) | 10 nA |
| Current - Valley (Iv) | 50 µA |
| Current - Peak | 2 µA |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2500 |
12,857
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
The 2N6027 TIN/LEAD, made by Central Semiconductor, belongs to the bipolar transistors - bjt product category. Key specifications include voltage: 40V, power dissipation: 300 mW, voltage, output: 6V, voltage, offset: 1.6 V, current, gate to anode leakage: 10 nA and current, valley: 50 µA. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2N6027 TIN/LEAD for same-day shipping with genuine parts guaranteed.
