| Mfr. No: | 2N6297 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT PNP 80Vcbo 80Vceo 5.0Vebo 5.0A 50W |
| Datasheet: | 2N6297 TIN/LEAD Datasheet (PDF) |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 4 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 3V @ 40mA, 4A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 2A, 3V |
| Power - Max | 50 W |
| Frequency - Transition | 4MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
2N6297 TIN/LEAD is a bipolar transistors - bjt component manufactured by Central Semiconductor. Technical specifications for this part include transistor type: PNP - Darlington, current, collector (ic): 4 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 3V @ 40mA, 4A, current, collector cutoff: 500µA and DC current gain (hfe) (min) @ ic, vce: 750 @ 2A, 3V. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers 2N6297 TIN/LEAD in stock, verified authentic and ready for same-day dispatch.