| Mfr. No: | 2N6299 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Vcbo 80V Vceo 80V 5.0VA 120mA 75W |
| Lifecycle: | Active |
| Datasheet: | 2N6299 TIN/LEAD Datasheet (PDF) |
| Transistor Type | PNP - Darlington |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 16mA, 4A |
| Current - Collector Cutoff (Max) | 500µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Power - Max | 75 W |
| Frequency - Transition | 4MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Central Semiconductor manufactures the 2N6299 TIN/LEAD, a bipolar transistors - bjt part used in electronic assemblies. This component is defined by transistor type: PNP - Darlington, current, collector (ic): 8 A, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 2V @ 16mA, 4A, current, collector cutoff: 500µA and DC current gain (hfe) (min) @ ic, vce: 750 @ 4A, 3V. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N6299 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.