| Mfr. No: | 2N6300 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 60Vcbo 60Vceo 5.0Vebo 8.0A 75W |
| Datasheet: | 2N6300 TIN/LEAD Datasheet (PDF) |
| Transistor Type | NPN - Darlington |
| Current - Collector (Ic) (Max) | 8 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 2V @ 16mA, 4A |
| Current - Collector Cutoff (Max) | 500µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 750 @ 4A, 3V |
| Power - Max | 75 W |
| Frequency - Transition | 4MHz |
| Operating Temperature | -65°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | TO-213AA, TO-66-2 |
| Supplier Device Package | TO-66 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290065 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
Central Semiconductor manufactures the 2N6300 TIN/LEAD, a bipolar transistors - bjt part used in electronic assemblies. Its datasheet lists transistor type: NPN - Darlington, current, collector (ic): 8 A, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 2V @ 16mA, 4A, current, collector cutoff: 500µA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 750 @ 4A, 3V. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. You can source 2N6300 TIN/LEAD through Simplytronix, with fast shipping and verified authenticity.