*For representation only.
2N657A TIN/LEAD
| Mfr. No: | 2N657A TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 100Vcbo 100Vceo 6.0Vebo 10uA 20pF |
| Lifecycle: | Active |
| Datasheet: | 2N657A TIN/LEAD Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | - |
| Current - Collector Cutoff (Max) | 10µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 200mA, 10V |
| Frequency - Transition | 50MHz |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 500 |
6,076
Units In Stock
📦 Bulk
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Central Semiconductor, the 2N657A TIN/LEAD is classified under bipolar transistors - bjt. Key specifications include transistor type: NPN, voltage, collector emitter breakdown: 100 V, vce saturation (max) @ ib, ic: -, current, collector cutoff: 10µA, DC current gain (hfe) (min) @ ic, vce: 30 @ 200mA, 10V and frequency, transition: 50MHz. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. Get 2N657A TIN/LEAD from Simplytronix, shipped same day with a genuine parts guarantee.
