| Mfr. No: | 2N699 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 120Vcbo 80Vceo 7.0Vebo 150mA 15pF |
| Datasheet: | 2N699 TIN/LEAD Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 80 V |
| Vce Saturation (Max) @ Ib, Ic | 5V @ 15mA, 150mA |
| Current - Collector Cutoff (Max) | 2µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 40 @ 150mA, 10V |
| Power - Max | 600 mW |
| Frequency - Transition | 50MHz |
| Operating Temperature | -65°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-205AD, TO-39-3 Metal Can |
| Supplier Device Package | TO-39 |
| Packaging | Bulk |
| Standard Pack Qty | 500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 294 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
The 2N699 TIN/LEAD, made by Central Semiconductor, belongs to the bipolar transistors - bjt product category. Notable characteristics of this part include transistor type: NPN, current, collector (ic): 500 mA, voltage, collector emitter breakdown: 80 V, vce saturation (max) @ ib, ic: 5V @ 15mA, 150mA, current, collector cutoff: 2µA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 40 @ 150mA, 10V. This part has a typical lead time of 294 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks 2N699 TIN/LEAD for same-day shipping with genuine parts guaranteed.