*For representation only.
2N708 TIN/LEAD
| Mfr. No: | 2N708 TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN 40Vcbo 15Vceo 15Vebo 6.0pF |
| Lifecycle: | Active |
| Datasheet: | 2N708 TIN/LEAD Datasheet (PDF) |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 25µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 10mA, 1V |
| Frequency - Transition | 400MHz |
| Operating Temperature | - |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-206AA, TO-18-3 Metal Can |
| Supplier Device Package | TO-18 |
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Product Attributes
| Packaging | Bulk |
| Standard Pack Qty | 2000 |
14,862
Units In Stock
📦 Bulk
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- Global shipping
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Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 0 Days (from factory) |
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Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Manufactured by Central Semiconductor, the 2N708 TIN/LEAD is classified under bipolar transistors - bjt. Technical specifications for this part include transistor type: NPN, voltage, collector emitter breakdown: 15 V, vce saturation (max) @ ib, ic: 400mV @ 1mA, 10mA, current, collector cutoff: 25µA, DC current gain (hfe) (min) @ ic, vce: 30 @ 10mA, 1V and frequency, transition: 400MHz. This part has a typical lead time of 0 Days from factory and ships with a full manufacturer datasheet available for download. Get 2N708 TIN/LEAD from Simplytronix, shipped same day with a genuine parts guarantee.
