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| Mfr. No: | 2N5770 APM TIN/LEAD |
| Mfr.: | Central Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 15V,50mA,625mW Through-Hole Transistor-Small Signal (<=1A) NPN RF Oscillator |
| Lifecycle: | Active |
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 15V |
| Frequency - Transition | 900MHz |
| Noise Figure (dB Typ @ f) | 6dB @ 60MHz |
| Gain | 15dB |
| Power - Max | 625mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 8mA, 1V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92-3 |
| Packaging | Ammo Pack |
| Standard Pack Qty | 2000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 210 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541210095 |
| ECCN | EAR99 |
2N5770 APM TIN/LEAD is a bipolar transistors - bjt part produced by Central Semiconductor for use across a range of applications. Technical specifications for this part include transistor type: NPN, voltage, collector emitter breakdown: 15V, frequency, transition: 900MHz, noise figure: 6dB @ 60MHz, gain: 15dB and power, max: 625mW. This part has a typical lead time of 210 Days from factory. Order 2N5770 APM TIN/LEAD from Simplytronix for authenticated stock and same-day order processing.
