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2DB1386Q-13 Diodes Incorporated
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2DB1386Q-13

Mfr. No: 2DB1386Q-13
Mfr.: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: Bipolar Transistors - BJT 1000W -20Vceo
Lifecycle: Active
Datasheet: 2DB1386Q-13 Datasheet (PDF)
⚙ Specifications
Transistor Type PNP
Current - Collector (Ic) (Max) 5 A
Voltage - Collector Emitter Breakdown (Max) 20 V
Vce Saturation (Max) @ Ib, Ic 1V @ 100mA, 4A
Current - Collector Cutoff (Max) 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 500mA, 2V
Power - Max 1 W
Frequency - Transition 100MHz
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Package / Case TO-243AA
Supplier Device Package SOT-89-3
📦 Product Attributes
Packaging Reel
Standard Pack Qty 2500
🔁 Alternate / Replacement Parts
Alternate Packaging 2DB1386Q
Suggested Replacement
6,571
Units In Stock
📦 Reel
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🔑 Key Specifications
Category Bipolar Transistors - BJT
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541290000
USHTS 8541290055
JPHTS 8541290100
KRHTS 8541299000
TARIC 8541290000
MXHTS 85412999
ECCN EAR99
ℹ Product Overview

Manufactured by Diodes Incorporated, the 2DB1386Q-13 is classified under transistors. Notable characteristics of this part include transistor type: PNP, current, collector (ic): 5 A, voltage, collector emitter breakdown: 20 V, vce saturation (max) @ ib, ic: 1V @ 100mA, 4A, current, collector cutoff: 500nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 120 @ 500mA, 2V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Get 2DB1386Q-13 from Simplytronix, shipped same day with a genuine parts guarantee.

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