| Mfr. No: | BSS8402DWQ-7 |
| Mfr.: | Diodes Incorporated |
| Category: | MOSFETs |
| Description: | MOSFETs BSS Family SOT363 T&R 3K |
| Technology | MOSFET (Metal Oxide) |
| Configuration | N and P-Channel Complementary |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V, 50V |
| Current - Continuous Drain (Id) @ 25°C | 115mA, 130mA |
| Rds On (Max) @ Id, Vgs | 13.5Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Input Capacitance (Ciss) (Max) @ Vds | 50pF @ 25V, 45pF @ 25V |
| Power - Max | 200mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
The BSS8402DWQ-7, made by Diodes Incorporated, belongs to the mosfets product category. Key specifications include technology: MOSFET (Metal Oxide), configuration: N and P-Channel Complementary, FET feature: Logic Level Gate, drain to source voltage: 60V, 50V, current, continuous drain (id) @ 25°C: 115mA, 130mA and rds on (max) @ id, vgs: 13.5Ohm @ 500mA, 10V. This part has a typical lead time of 280 Days from factory. Simplytronix stocks BSS8402DWQ-7 for same-day shipping with genuine parts guaranteed.