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| Mfr. No: | DMN2009UFDF-7 |
| Mfr.: | Diodes Incorporated |
| Category: | MOSFETs |
| Description: | MOSFETs MOSFET BVDSS: 8V 24V U-DFN2020-6 T&R 3K |
| Datasheet: | DMN2009UFDF-7 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 20 V |
| Current - Continuous Drain (Id) @ 25°C | 12.8A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Rds On (Max) @ Id, Vgs | 9mOhm @ 8.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 27.9 nC @ 10 V |
| Vgs (Max) | ±12V |
| Input Capacitance (Ciss) (Max) @ Vds | 1083 pF @ 10 V |
| FET Feature | - |
| Power Dissipation (Max) | 1.3W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | U-DFN2020-6 (Type F) |
| Package / Case | 6-UDFN Exposed Pad |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
DMN2009UFDF-7 is a mosfets part produced by Diodes Incorporated for use across a range of applications. Notable characteristics of this part include FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 20 V, current, continuous drain (id) @ 25°C: 12.8A (Ta), drive voltage: 2.5V, 4.5V and rds on (max) @ id, vgs: 9mOhm @ 8.5A, 4.5V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order DMN2009UFDF-7 from Simplytronix for authenticated stock and same-day order processing.
