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DMN30H4D0LFDE-7 Diodes Incorporated
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DMN30H4D0LFDE-7

Mfr. No: DMN30H4D0LFDE-7
Mfr.: Diodes Incorporated
Category: MOSFETs
Description: MOSFETs N-Ch Enh Mode FET 300Vds 20Vgs FET
Lifecycle: Active
Datasheet: DMN30H4D0LFDE-7 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 300 V
Current - Continuous Drain (Id) @ 25°C 550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.7V, 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 300mA, 10V
Vgs(th) (Max) @ Id 2.8V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.6 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 187.3 pF @ 25 V
FET Feature -
Power Dissipation (Max) 630mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package U-DFN2020-6 (Type E)
Package / Case 6-PowerUDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 3000
🔁 Alternate / Replacement Parts
Alternate Packaging DMN30H4D0LFDE-13
Suggested Replacement
14,500
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541290000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541219000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

DMN30H4D0LFDE-7 is a mosfets component manufactured by Diodes Incorporated. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 300 V, current, continuous drain (id) @ 25°C: 550mA (Ta), drive voltage: 2.7V, 10V and rds on (max) @ id, vgs: 4Ohm @ 300mA, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix offers DMN30H4D0LFDE-7 in stock, verified authentic and ready for same-day dispatch.

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