| Mfr. No: | DMN3190LDW-13 |
| Mfr.: | Diodes Incorporated |
| Category: | MOSFETs |
| Description: | MOSFETs N-Ch Enh Mode FET 30Vdss 20Vgss |
| Datasheet: | DMN3190LDW-13 Datasheet (PDF) |
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25°C | 1A |
| Rds On (Max) @ Id, Vgs | 190mOhm @ 1.3A, 10V |
| Vgs(th) (Max) @ Id | 2.8V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 2nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 87pF @ 20V |
| Power - Max | 320mW |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Supplier Device Package | SOT-363 |
| Packaging | Reel |
| Standard Pack Qty | 10000 |
| Alternate Packaging | DMN3190LDW-7 |
| Suggested Replacement | DMN3190LDW-7 |
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541100090 |
| USHTS | 8541210095 |
| JPHTS | 854110090 |
| KRHTS | 8541109000 |
| TARIC | 8541100000 |
| MXHTS | 8541100101 |
| ECCN | EAR99 |
Diodes Incorporated manufactures the DMN3190LDW-13, a mosfets part used in electronic assemblies. It features technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 30V, current, continuous drain (id) @ 25°C: 1A and rds on (max) @ id, vgs: 190mOhm @ 1.3A, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. You can source DMN3190LDW-13 through Simplytronix, with fast shipping and verified authenticity.