*For representation only.
DMN32D2LFB4-7
| Mfr. No: | DMN32D2LFB4-7 |
| Mfr.: | Diodes Incorporated |
| Category: | MOSFETs |
| Description: | MOSFETs 350mW 30Vdss |
| Datasheet: | DMN32D2LFB4-7 Datasheet (PDF) |
⚙
Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 30 V |
| Current - Continuous Drain (Id) @ 25°C | 300mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 1.8V, 4V |
| Rds On (Max) @ Id, Vgs | 1.2Ohm @ 100mA, 4V |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Vgs (Max) | ±10V |
| Input Capacitance (Ciss) (Max) @ Vds | 39 pF @ 3 V |
| FET Feature | - |
| Power Dissipation (Max) | 350mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | X2-DFN1006-3 |
| Package / Case | 3-XFDFN |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
8,965
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ℹ
Product Overview
The DMN32D2LFB4-7 from Diodes Incorporated falls under the mosfets category. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 300mA (Ta), drive voltage: 1.8V, 4V and rds on (max) @ id, vgs: 1.2Ohm @ 100mA, 4V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. DMN32D2LFB4-7 is available through Simplytronix, sourced and verified for authenticity.
