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DMN33D8LTQ-13 Diodes Incorporated
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DMN33D8LTQ-13

Mfr. No: DMN33D8LTQ-13
Mfr.: Diodes Incorporated
Category: MOSFETs
Description: MOSFETs MOSFET BVDSS 25V-30V
Lifecycle: Active
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 115mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V
Rds On (Max) @ Id, Vgs 5Ohm @ 10mA, 4V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 0.55 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 48 pF @ 5 V
FET Feature -
Power Dissipation (Max) 240mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade Automotive
Qualification AEC-Q101
Mounting Type Surface Mount
Supplier Device Package SOT-523
Package / Case SOT-523
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging DMN33D8LTQ-7
Suggested Replacement
14,865
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 84 Days (from factory)
📄 Documentation
Datasheet not available
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
USHTS 8541210095
TARIC 8541290000
ECCN EAR99
ℹ Product Overview

DMN33D8LTQ-13 is a mosfets part produced by Diodes Incorporated for use across a range of applications. Among its key specs are FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 115mA (Ta), drive voltage: 2.5V, 4V and rds on (max) @ id, vgs: 5Ohm @ 10mA, 4V. This part has a typical lead time of 84 Days from factory. Order DMN33D8LTQ-13 from Simplytronix for authenticated stock and same-day order processing.

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