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DMN3900UFA-7B Diodes Incorporated
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DMN3900UFA-7B

Mfr. No: DMN3900UFA-7B
Mfr.: Diodes Incorporated
Category: MOSFETs
Description: MOSFETs 30V N-CH MOSFET
Datasheet: DMN3900UFA-7B Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30 V
Current - Continuous Drain (Id) @ 25°C 550mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 760mOhm @ 200mA, 4.5V
Vgs(th) (Max) @ Id 950mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.7 nC @ 4.5 V
Vgs (Max) ±8V
Input Capacitance (Ciss) (Max) @ Vds 42.2 pF @ 25 V
FET Feature -
Power Dissipation (Max) 390mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package X2-DFN0806-3
Package / Case 3-XFDFN
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging
Suggested Replacement
12,998
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 168 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8541210000
USHTS 8541210095
JPHTS 854121000
KRHTS 8541299000
TARIC 8541210000
MXHTS 8541210100
ECCN EAR99
ℹ Product Overview

The DMN3900UFA-7B, made by Diodes Incorporated, belongs to the mosfets product category. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 30 V, current, continuous drain (id) @ 25°C: 550mA (Ta), drive voltage: 1.8V, 4.5V and rds on (max) @ id, vgs: 760mOhm @ 200mA, 4.5V. This part has a typical lead time of 168 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix stocks DMN3900UFA-7B for same-day shipping with genuine parts guaranteed.

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