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DMN53D0LW-13 Diodes Incorporated
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DMN53D0LW-13

Mfr. No: DMN53D0LW-13
Mfr.: Diodes Incorporated
Category: MOSFETs
Description: MOSFETs FET Enhancement Mode N-Ch .3A 2.5Vgs 56pF
Lifecycle: Active
Datasheet: DMN53D0LW-13 Datasheet (PDF)
⚙ Specifications
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V
Current - Continuous Drain (Id) @ 25°C 360mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 270mA, 10V
Vgs(th) (Max) @ Id 1.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs 1.2 nC @ 10 V
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 45.8 pF @ 25 V
FET Feature -
Power Dissipation (Max) 320mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-323
Package / Case SC-70, SOT-323
📦 Product Attributes
Packaging Reel
Standard Pack Qty 10000
🔁 Alternate / Replacement Parts
Alternate Packaging DMN53D0LW-7
Suggested Replacement
12,319
Units In Stock
📦 Reel
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🔑 Key Specifications
Category MOSFETs
RoHS RoHS Compliant
Lifecycle
Lead Time 280 Days (from factory)
📄 Documentation
⬇ Download Datasheet
🌐 Compliance & Export
Country / Standard Code
CNHTS 8541210000
CAHTS 8542390000
USHTS 8541210095
JPHTS 854239099
TARIC 8542399000
MXHTS 8542399901
ECCN EAR99
ℹ Product Overview

Diodes Incorporated's DMN53D0LW-13 is a widely used mosfets part in electronic designs. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 50 V, current, continuous drain (id) @ 25°C: 360mA (Ta), drive voltage: 5V, 10V and rds on (max) @ id, vgs: 2Ohm @ 270mA, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies DMN53D0LW-13 with same-day shipping and guaranteed authenticity.

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