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| Mfr. No: | DMWSH120H18HM4 |
| Mfr.: | Diodes Incorporated |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 108A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 18mOhm @ 75A, 18V |
| Vgs(th) (Max) @ Id | 4.4V @ 37mA |
| Gate Charge (Qg) (Max) @ Vgs | 158 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 4206 pF @ 800 V |
| FET Feature | - |
| Power Dissipation (Max) | 313W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
DMWSH120H18HM4 is a sic mosfets part produced by Diodes Incorporated for use across a range of applications. It features FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 108A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 18mOhm @ 75A, 18V. This part has a typical lead time of 112 Days from factory. Order DMWSH120H18HM4 from Simplytronix for authenticated stock and same-day order processing.
