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| Mfr. No: | DMWSH120H80SCT7-13 |
| Mfr.: | Diodes Incorporated |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SiC MOSFET BVDSS: >1000V TO263-7 T&R 0.8K |
| Lifecycle: | Active |
| Datasheet: | DMWSH120H80SCT7-13 Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 37.5A (Tj) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 80.5mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 63 nC @ 18 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 1102 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-263-7 |
| Package / Case | TO-263-8, D2PAK (7 Leads + Tab), TO-263CA |
| Packaging | Reel |
| Standard Pack Qty | 800 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
Diodes Incorporated's DMWSH120H80SCT7-13 is a widely used sic mosfets part in electronic designs. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 37.5A (Tj), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 80.5mOhm @ 20A, 18V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Simplytronix supplies DMWSH120H80SCT7-13 with same-day shipping and guaranteed authenticity.
