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| Mfr. No: | DMWSH120H80SM3 |
| Mfr.: | Diodes Incorporated |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247 TUBE 30PS |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 44.5A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 15V, 18V |
| Rds On (Max) @ Id, Vgs | 80.5mOhm @ 20A, 18V |
| Vgs(th) (Max) @ Id | 3.5V @ 5mA |
| Gate Charge (Qg) (Max) @ Vgs | 59.1 nC @ 18 V |
| Vgs (Max) | +22V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1069 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 238W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247 |
| Package / Case | TO-247-3 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 112 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
Diodes Incorporated manufactures the DMWSH120H80SM3, a sic mosfets part used in electronic assemblies. This component is defined by FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1200 V, current, continuous drain (id) @ 25°C: 44.5A (Tc), drive voltage: 15V, 18V and rds on (max) @ id, vgs: 80.5mOhm @ 20A, 18V. This part has a typical lead time of 112 Days from factory. You can source DMWSH120H80SM3 through Simplytronix, with fast shipping and verified authenticity.
