*For representation only.
DXTN80060DFGQ-7
| Mfr. No: | DXTN80060DFGQ-7 |
| Mfr.: | Diodes Incorporated |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Pwr Low Sat Transistor PowerDI3333-8/SWP T&R 2K |
| Lifecycle: | Active |
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Specifications
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 6.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 650mA, 6.5A |
| Current - Collector Cutoff (Max) | 300nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Power - Max | 2.4 W |
| Frequency - Transition | 140MHz |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount, Wettable Flank |
| Package / Case | 8-PowerVDFN |
| Supplier Device Package | PowerDI3333-8 (SWP) Type UX |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 2000 |
935
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 280 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290055 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
Diodes Incorporated manufactures the DXTN80060DFGQ-7, a transistors part used in electronic assemblies. It features transistor type: NPN, current, collector (ic): 6.5 A, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 200mV @ 650mA, 6.5A, current, collector cutoff: 300nA and DC current gain (hfe) (min) @ ic, vce: 300 @ 100mA, 2V. This part has a typical lead time of 280 Days from factory. You can source DXTN80060DFGQ-7 through Simplytronix, with fast shipping and verified authenticity.
