*For representation only.
DXTP5820CFDB-7
| Mfr. No: | DXTP5820CFDB-7 |
| Mfr.: | Diodes Incorporated |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Pwr Low Sat Transistor U-DFN2020-3 T&R 3K |
| Lifecycle: | Active |
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Specifications
| Transistor Type | PNP |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Vce Saturation (Max) @ Ib, Ic | 350mV @ 300mA, 6A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 1A, 2V |
| Power - Max | 690 mW |
| Frequency - Transition | 140MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 3-UDFN Exposed Pad |
| Supplier Device Package | U-DFN2020-3 (Type B) |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
9,646
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
DXTP5820CFDB-7 is a transistors component manufactured by Diodes Incorporated. Technical specifications for this part include transistor type: PNP, current, collector (ic): 6 A, voltage, collector emitter breakdown: 20 V, vce saturation (max) @ ib, ic: 350mV @ 300mA, 6A, current, collector cutoff: 100nA and DC current gain (hfe) (min) @ ic, vce: 200 @ 1A, 2V. This part has a typical lead time of 280 Days from factory. Simplytronix offers DXTP5820CFDB-7 in stock, verified authentic and ready for same-day dispatch.
