| Mfr. No: | MJD31CHQ-13 |
| Mfr.: | Diodes Incorporated |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K |
| Lifecycle: | Active |
| Datasheet: | MJD31CHQ-13 Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 500µA, 50mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 100mA, 3V |
| Power - Max | 1.45 W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Supplier Device Package | TO-252 (DPAK) |
| Packaging | Reel |
| Standard Pack Qty | 2500 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The MJD31CHQ-13 from Diodes Incorporated falls under the transistors category. Technical specifications for this part include transistor type: NPN, current, collector (ic): 3 A, voltage, collector emitter breakdown: 100 V, vce saturation (max) @ ib, ic: 400mV @ 500µA, 50mA, current, collector cutoff: 1µA and DC current gain (hfe) (min) @ ic, vce: 120 @ 100mA, 3V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. MJD31CHQ-13 is available through Simplytronix, sourced and verified for authenticity.