*For representation only.
MMBTH10Q-7-F
| Mfr. No: | MMBTH10Q-7-F |
| Mfr.: | Diodes Incorporated |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT RF Transistor |
| Lifecycle: | Active |
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Specifications
| Transistor Type | NPN |
| Voltage - Collector Emitter Breakdown (Max) | 25V |
| Frequency - Transition | 650MHz |
| Noise Figure (dB Typ @ f) | - |
| Gain | - |
| Power - Max | 310mW |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 4mA, 10V |
| Current - Collector (Ic) (Max) | 50mA |
| Operating Temperature | -65°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
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Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
14,837
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 308 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| USHTS | 8541210075 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
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Product Overview
Diodes Incorporated manufactures the MMBTH10Q-7-F, a bipolar transistors - bjt part used in electronic assemblies. Among its key specs are transistor type: NPN, voltage, collector emitter breakdown: 25V, frequency, transition: 650MHz, noise figure: -, gain: - and power, max: 310mW. This part has a typical lead time of 308 Days from factory. You can source MMBTH10Q-7-F through Simplytronix, with fast shipping and verified authenticity.
