| Mfr. No: | ZTX857 |
| Mfr.: | Diodes Incorporated |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT NPN Big Chip SELine |
| Lifecycle: | Last Time Buy |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 3 A |
| Voltage - Collector Emitter Breakdown (Max) | 300 V |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 600mA, 3A |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 500mA, 10V |
| Power - Max | 1.2 W |
| Frequency - Transition | 80MHz |
| Operating Temperature | -55°C ~ 200°C (TJ) |
| Mounting Type | Through Hole |
| Package / Case | E-Line-3 |
| Supplier Device Package | E-Line (TO-92 compatible) |
| Packaging | Bulk |
| Standard Pack Qty | 4000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541210000 |
| USHTS | 8541290055 |
| JPHTS | 8541210101 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 85412101 |
| ECCN | EAR99 |
ZTX857 is a transistors part produced by Diodes Incorporated for use across a range of applications. This component is defined by transistor type: NPN, current, collector (ic): 3 A, voltage, collector emitter breakdown: 300 V, vce saturation (max) @ ib, ic: 250mV @ 600mA, 3A, current, collector cutoff: 50nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 100 @ 500mA, 10V. This part has a typical lead time of 280 Days from factory. Order ZTX857 from Simplytronix for authenticated stock and same-day order processing.