*For representation only.
ZVN3310FTA
| Mfr. No: | ZVN3310FTA |
| Mfr.: | Diodes Incorporated |
| Category: | MOSFETs |
| Description: | MOSFETs N-Chnl 100 V |
| Lifecycle: | Active |
| Datasheet: | ZVN3310FTA Datasheet (PDF) |
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Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 100mA (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 10Ohm @ 500mA, 10V |
| Vgs(th) (Max) @ Id | 2.4V @ 1mA |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 40 pF @ 25 V |
| FET Feature | - |
| Power Dissipation (Max) | 330mW (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-23-3 |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 3000 |
8,249
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210095 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ℹ
Product Overview
ZVN3310FTA is a mosfets part produced by Diodes Incorporated for use across a range of applications. It features FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 100mA (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 10Ohm @ 500mA, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order ZVN3310FTA from Simplytronix for authenticated stock and same-day order processing.
