| Mfr. No: | ZX5T851GQTC |
| Mfr.: | Diodes Incorporated |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT Pwr Low Sat Transistor SOT223 T&R 4K |
| Lifecycle: | Active |
| Datasheet: | ZX5T851GQTC Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 6 A |
| Voltage - Collector Emitter Breakdown (Max) | 60 V |
| Vce Saturation (Max) @ Ib, Ic | 260mV @ 300mA, 6A |
| Current - Collector Cutoff (Max) | 20nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 100 @ 2A, 1V |
| Power - Max | 1.2 W |
| Frequency - Transition | 130MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Surface Mount |
| Package / Case | TO-261-4, TO-261AA |
| Supplier Device Package | SOT-223-3 |
| Packaging | Reel |
| Standard Pack Qty | 4000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| USHTS | 8541290055 |
| TARIC | 8541210000 |
| ECCN | EAR99 |
ZX5T851GQTC is a transistors part produced by Diodes Incorporated for use across a range of applications. This part is specified with transistor type: NPN, current, collector (ic): 6 A, voltage, collector emitter breakdown: 60 V, vce saturation (max) @ ib, ic: 260mV @ 300mA, 6A, current, collector cutoff: 20nA and DC current gain (hfe) (min) @ ic, vce: 100 @ 2A, 1V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order ZX5T851GQTC from Simplytronix for authenticated stock and same-day order processing.