| Mfr. No: | ZXMN10A25GTA |
| Mfr.: | Diodes Incorporated |
| Category: | MOSFETs |
| Description: | MOSFETs 100V N-Channel 2.9A MOSFET |
| Lifecycle: | Active |
| Datasheet: | ZXMN10A25GTA Datasheet (PDF) |
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V |
| Current - Continuous Drain (Id) @ 25°C | 2.9A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Rds On (Max) @ Id, Vgs | 125mOhm @ 2.9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17 nC @ 10 V |
| Vgs (Max) | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 859 pF @ 50 V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta) |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | SOT-223-3 |
| Package / Case | TO-261-4, TO-261AA |
| Packaging | Reel |
| Standard Pack Qty | 1000 |
| Category | MOSFETs |
| RoHS | RoHS Compliant By Exemption |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
The ZXMN10A25GTA from Diodes Incorporated falls under the mosfets category. This part is specified with FET type: N-Channel, technology: MOSFET (Metal Oxide), drain to source voltage: 100 V, current, continuous drain (id) @ 25°C: 2.9A (Ta), drive voltage: 10V and rds on (max) @ id, vgs: 125mOhm @ 2.9A, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. ZXMN10A25GTA is available through Simplytronix, sourced and verified for authenticity.