*For representation only.
ZXMN6A25DN8TA
| Mfr. No: | ZXMN6A25DN8TA |
| Mfr.: | Diodes Incorporated |
| Category: | MOSFETs |
| Description: | MOSFETs Dl 60V N-Chnl UMOS |
| Lifecycle: | Active |
| Datasheet: | ZXMN6A25DN8TA Datasheet (PDF) |
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Specifications
| Technology | MOSFET (Metal Oxide) |
| Configuration | 2 N-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25°C | 3.8A |
| Rds On (Max) @ Id, Vgs | 50mOhm @ 3.6A, 10V |
| Vgs(th) (Max) @ Id | 1V @ 250µA (Min) |
| Gate Charge (Qg) (Max) @ Vgs | 20.4nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1063pF @ 30V |
| Power - Max | 1.8W |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Supplier Device Package | 8-SO |
📦
Product Attributes
| Packaging | Reel |
| Standard Pack Qty | 500 |
7,811
Units In Stock
📦 Reel
- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
🔑
Key Specifications
| Category | MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
📄
Documentation
⬇ Download Datasheet
🌐
Compliance & Export
| Country / Standard | Code |
|---|---|
| CNHTS | 8541290000 |
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| KRHTS | 8541299000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
ℹ
Product Overview
ZXMN6A25DN8TA is a mosfets part produced by Diodes Incorporated for use across a range of applications. Its datasheet lists technology: MOSFET (Metal Oxide), configuration: 2 N-Channel (Dual), FET feature: Logic Level Gate, drain to source voltage: 60V, current, continuous drain (id) @ 25°C: 3.8A and rds on (max) @ id, vgs: 50mOhm @ 3.6A, 10V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order ZXMN6A25DN8TA from Simplytronix for authenticated stock and same-day order processing.
