| Mfr. No: | ZXT11N20DFTA |
| Mfr.: | Diodes Incorporated |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT 20V NPN SuperSOT4 |
| Datasheet: | ZXT11N20DFTA Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 2.5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Vce Saturation (Max) @ Ib, Ic | 130mV @ 250mA, 2.5A |
| Current - Collector Cutoff (Max) | 100nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 300 @ 100mA, 2V |
| Power - Max | 625 mW |
| Frequency - Transition | 160MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Mounting Type | Surface Mount |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Supplier Device Package | SOT-23-3 |
| Packaging | Reel |
| Standard Pack Qty | 3000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 280 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
ZXT11N20DFTA is a bipolar transistors - bjt part produced by Diodes Incorporated for use across a range of applications. This part is specified with transistor type: NPN, current, collector (ic): 2.5 A, voltage, collector emitter breakdown: 20 V, vce saturation (max) @ ib, ic: 130mV @ 250mA, 2.5A, current, collector cutoff: 100nA and DC current gain (hfe) (min) @ ic, vce: 300 @ 100mA, 2V. This part has a typical lead time of 280 Days from factory and ships with a full manufacturer datasheet available for download. Order ZXT11N20DFTA from Simplytronix for authenticated stock and same-day order processing.