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| Mfr. No: | DMWSH170H850HM4Q |
| Mfr.: | Diodes Incorporated |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS |
| Lifecycle: | Active |
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 1700 V |
| Current - Continuous Drain (Id) @ 25°C | 6.58A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V, 20V |
| Rds On (Max) @ Id, Vgs | 850mOhm @ 2A, 20V |
| Vgs(th) (Max) @ Id | 4V @ 500µA |
| Gate Charge (Qg) (Max) @ Vgs | 14.8 nC @ 20 V |
| Vgs (Max) | +25V, -10V |
| Input Capacitance (Ciss) (Max) @ Vds | 178 pF @ 1000 V |
| FET Feature | - |
| Power Dissipation (Max) | 73.5W (Tc) |
| Operating Temperature | -55°C ~ 175°C |
| Grade | Automotive |
| Qualification | AEC-Q101 |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
| Packaging | Tube |
| Standard Pack Qty | 30 |
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 0 Days (from factory) |
| Country / Standard | Code |
|---|---|
| USHTS | 8541290095 |
As a sic mosfets component, the DMWSH170H850HM4Q is manufactured and supplied by Diodes Incorporated. Among its key specs are FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 1700 V, current, continuous drain (id) @ 25°C: 6.58A (Tc), drive voltage: 18V, 20V and rds on (max) @ id, vgs: 850mOhm @ 2A, 20V. This part has a typical lead time of 0 Days from factory. Simplytronix carries DMWSH170H850HM4Q in stock, backed by a genuine parts guarantee and quick dispatch.
