| Mfr. No: | 2N5551 |
| Mfr.: | Diotec Semiconductor |
| Category: | Bipolar Transistors - BJT |
| Description: | Bipolar Transistors - BJT BJT, TO-92, 160V, 600mA, NPN |
| Datasheet: | 2N5551 Datasheet (PDF) |
| Transistor Type | NPN |
| Current - Collector (Ic) (Max) | 600 mA |
| Voltage - Collector Emitter Breakdown (Max) | 160 V |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 5mA, 50mA |
| Current - Collector Cutoff (Max) | 50nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 10mA, 5V |
| Power - Max | 625 mW |
| Frequency - Transition | 300MHz |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) |
| Supplier Device Package | TO-92 |
| Packaging | Ammo Pack |
| Standard Pack Qty | 4000 |
| Category | Bipolar Transistors - BJT |
| RoHS | RoHS Compliant |
| Lifecycle | |
| Lead Time | 42 Days (from factory) |
| Country / Standard | Code |
|---|---|
| CNHTS | 8541210000 |
| CAHTS | 8541210000 |
| USHTS | 8541210075 |
| JPHTS | 854121000 |
| KRHTS | 8541219000 |
| TARIC | 8541210000 |
| MXHTS | 8541210100 |
| ECCN | EAR99 |
The 2N5551 from Diotec Semiconductor falls under the bipolar transistors - bjt category. Among its key specs are transistor type: NPN, current, collector (ic): 600 mA, voltage, collector emitter breakdown: 160 V, vce saturation (max) @ ib, ic: 200mV @ 5mA, 50mA, current, collector cutoff: 50nA (ICBO) and DC current gain (hfe) (min) @ ic, vce: 80 @ 10mA, 5V. This part has a typical lead time of 42 Days from factory and ships with a full manufacturer datasheet available for download. 2N5551 is available through Simplytronix, sourced and verified for authenticity.