*For representation only.
DIF065SIC020
| Mfr. No: | DIF065SIC020 |
| Mfr.: | Diotec Semiconductor |
| Category: | SiC MOSFETs |
| Description: | SiC MOSFETs 650V TO-247-4L, N, 150A, 650V, 20m?, 175DegC |
| Lifecycle: | Active |
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Specifications
| FET Type | N-Channel |
| Technology | SiCFET (Silicon Carbide) |
| Drain to Source Voltage (Vdss) | 650 V |
| Current - Continuous Drain (Id) @ 25°C | 150A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 18V |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 75A, 18V |
| Vgs(th) (Max) @ Id | 4V @ 22mA |
| Gate Charge (Qg) (Max) @ Vgs | 236 nC @ 20 V |
| Vgs (Max) | +18V, -5V |
| Input Capacitance (Ciss) (Max) @ Vds | 7169 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | 550W (Tc) |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Through Hole |
| Supplier Device Package | TO-247-4 |
| Package / Case | TO-247-4 |
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Product Attributes
| Packaging | |
| Standard Pack Qty | 30 |
6,516
Units In Stock
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- 24-hour response
- Global shipping
- Genuine parts guaranteed
Test report available upon request —
view sample report
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Key Specifications
| Category | SiC MOSFETs |
| RoHS | RoHS Compliant |
| Lifecycle | New Product |
| Lead Time | 63 Days (from factory) |
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Documentation
Datasheet not available
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Compliance & Export
| Country / Standard | Code |
|---|---|
| CAHTS | 8541290000 |
| USHTS | 8541290065 |
| JPHTS | 854129000 |
| TARIC | 8541290000 |
| MXHTS | 8541299900 |
| ECCN | EAR99 |
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Product Overview
The DIF065SIC020 from Diotec Semiconductor falls under the sic mosfets category. This part is specified with FET type: N-Channel, technology: SiCFET (Silicon Carbide), drain to source voltage: 650 V, current, continuous drain (id) @ 25°C: 150A (Tc), drive voltage: 18V and rds on (max) @ id, vgs: 20mOhm @ 75A, 18V. This part has a typical lead time of 63 Days from factory. DIF065SIC020 is available through Simplytronix, sourced and verified for authenticity.
